Capping technique for zone-melting recrystallization of insulated semiconductor films

ABSTRACT

Wetting of encapsulated silicon-on-insulator (SOI) films during a zone-melting recrystallization (ZMR) process is enhanced by a high temperature anneal of the SOI structure in a reactive nitrogen-containing ambient to introduce nitrogen atoms to the polysilicon/silicon dioxide cap interface. The technique is not only more effective in preventing cap fracture and enhancing crystal quality but it also susceptible to batch processing with noncritical parameters in a highly efficient, uniform manner. Preferably, the cap is exposed to 100% ammonia at 1100° C. for one to three hours followed by a pure oxygen purge for twenty minutes. The ammonia atmosphere is reintroduced at the same temperature for another one to three hour period before ZMR. The process is believed to result in less than a half monolayer of nitrogen at the interior cap interface thereby significantly lowering the contact angle and improving the wetting character of the SOI structure.

The Government has rights in this invention pursuant to Grant NumberF19628-85-C-0002 awarded by the Department of the Air Force.

This is a continuation of co-pending application Ser. No. 805,117 filedon December 4, 1985, now abandoned.

BACKGROUND OF THE INVENTION

This invention relates generally to the conversion of amorphous orpolycrystalline semiconductor materials to substantially single crystalsemiconductor material by a process known as zone-meltingrecrystallization.

From transistors to very large scale integration of complex circuitry ona single chip, the field of solid state electronics has been builtlargely upon the abundant nonmetallic element silicon. Large diametersingle crystal boules of silicon are sliced into wafers on whichdopants, insulators and conductors are applied today using a variety ofprocesses. Over the past few years, a major effort has been devoted todeveloping a new silicon-based technology involving the preparation ofvery thin films of pure single crystal silicon on the order of one-halfmicron thick, compared to the one-half millimeter thickness of typicalsilicon wafers. The new technology is called silicon-on-insulator (SOI)technology because the thin silicon film is supported by an insulatingsubstrate. An efficient, reliable and economical process for producingthin film single crystal silicon has eluded researchers until now.

In comparison to device performance in bulk silicon, SOI promisessignificant advantages:

(1) improved speed performance in discrete devices and circuitsresulting from reduced parasitic capacitance;

(2) simplified device isolation and design layout, yielding potentiallyhigher packing densities; and

(3) radiation hard circuits for space and nuclear application.

In addition, new SOI technologies may also be utilized forthree-dimensional integration of circuits.

At present, there is one mature SOI technology, silicon-on-sapphire(SOS). However, the commercial utilization of SOS has been severelylimited by its high cost, relatively poor crystalline quality, anddifficulty in handling and processing in comparison to bulk Si.

Recently, a new SOI technology called zone-melting recrystallization(ZMR) based on standard silicon wafers rather than sapphire crystals hasexhibited the potential for displacing SOS and for utilization on a muchlarger scale by the semiconductor industry. The development of ZMR hasbeen frustrated by processing problems related to the physical chemistryof the interface between the molten silicon and adjacent silicon dioxidelayers which gives rise to the so-called silicon beading phenomenonduring ZMR.

SOI by the ZMR technique is produced by recrystallizing a fine-grainedSi film on an insulating substrate. A typical sample structure consistsof a silicon wafer coated with a 1 micron thermally grown SiO₂insulating layer, a half micron polycrystalline silicon (poly-Si) layerformed by low pressure chemical vapor deposition (LPCVD), topped by a 2micron layer of CVD SiO₂. The last layer forms a cover to encapsulatethe polysilicon film constraining it while the film is beingrecrystallized.

SOI by the ZMR technique is described in a paper entitled "Zone MeltingRecrystallization of Silicon Film With a Movable Strip Heater Oven" byGeis et al, J. Electrochem. Soc. Solid State Science and Technology,Vol. 129, p. 2813, 1982.

The sample is placed on a lower graphite strip and heated to a basetemperature of 1100°-1300° C. in an argon gas ambient. Silicon has amelting point of about 1410° C.; SiO₂ has a higher melting point, about1710° C. Additional radiant energy is typically provided by a movableupper graphite strip heater which produces localized strip heating ofthe sample to a temperature between the two melting points. Moving likea wand, the upper heater scans the molten zone across the sample leavinga recrystallized SOI film beneath the solid SiO₂ cap.

One of the major problems with this procedure arises out of aninteraction between the surface tension of the molten silicon and theinterface with the adjacent capping and insulating SiO₂ layers resultingin poor wetting by the molten silicon. The silicon breaks apart andagglomerates into small beads or stripes. The resulting delamination canfracture the cap and cause defects in the crystalline structure of thesilicon.

The silicon beading phenomena during ZMR is described in Weinberg et al,"Investigation of the Silicon Beading Phenomena During Zone MeltingRecrystallization", Applied Physics Letters 43(12) 15 December 1983,page 1105. This article also refers to the apparently beneficial effectof a silicon nitride (Si₃ N₄) CVD overlay on top of the SiO₂ cap. Thisarrangement appeared to improve the wetting properties of the moltensilicon on the silicon dioxide cap. A similar result is described inU.S. Pat. No. 4,371,421 to Fan et al entitled "Lateral Epitaxial Growthby Seeded Solidification", assigned to the assignee of the presentapplication. The Weinberg article attributes the apparent wettingenhancement to the presence of nitrogen atoms not only in theencapsulation layers but in particular at the interface between thesilicon layer and the overlying cap. Atomic nitrogen from the siliconnitride cladding probably diffuses through the 2 micron SiO₂ cap to thepoly-Si/cap interface and promotes wetting of the molten silicon on theSiO₂ surface. However, problems with uniformity and reproducibility havearisen because of difficulty in controlling deposition of the nitridelayer by CVD or by sputtering. Moreover, at best, this claddingtechnique does not readily lend itself to high volume simultaneous massproduction or batch processing.

SUMMARY OF THE INVENTION

Accordingly, the general purpose of the present invention is tointroduce the right amount of nitrogen to the poly-Si/SiO₂ cap interfacein a uniform, controlled fashion to improve wetting for encapsulated SOIfilms undergoing ZMR. Instead of using a nitride cladding layer, theSiO₂ cap is exposed to a high temperature anneal in a reactivenitrogen-containing ambient. Annealing the capped SOI in ammonia (NH₃)with an intermediate oxidation step yields excellent wetting propertiesduring ZMR. A wide range of process parameters is effective. Thepreferred anneal consists of:

(1) 1-3 hours in 100% NH₃ ;

(2) 20 minutes in O₂ ; and

(3) 1-3 hours in 100% NH₃, all at 1100° C. The oxygen anneal appears toshorten the annealing time by enabling more nitrogen to reach theinterface more quickly. A further variation on this process is to use anintermediate annealing step following deposition of a portion of thecap, i.e., to a partial depth (e.g., 0.2 micron) followed by depositionof the remainder of the cap to the full depth (e.g., 2 microns). The NH₃anneal produces better ZMR samples and can be performed as a batchprocess.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 is a schematic isometric view of an encapsulated SOI waferundergoing ZMR.

FIG. 2 is a schematic diagram of the cross-section of a typical SOIstructure.

FIG. 3 is an overall process flow diagram.

FIG. 4 is a detailed process flow diagram for the capped SOI formingstep of FIG. 3.

FIG. 5 is a detailed process flow diagram for the annealing step of FIG.3.

FIG. 6 is a schematic diagram of the SOI structure in cross-sectionillustrating the diffusion of nitrogen to the Si/SiO₂ cap interface inthe annealing atmosphere.

FIG. 7 is a process flow diagram of an alternate technique involvingformation of the cap in steps with an intervening NH₃ anneal.

FIG. 8 is a process flow diagram of an alternate technique involving theNH₃ anneal before forming the cap.

DETAILED DESCRIPTION

The following description generally relates to silicon semiconductors.While silicon is by far the most important semiconductor material in usetoday, the invention is applicable by analogy in the epitaxial growth ofother semiconductor materials such as gallium arsenide and germanium.

FIG. 1 illustrates the thermal components of a typical ZMR apparatus,namely, the stationary lower strip heater and the movable upper stripheater. The lower strip heater is formed by a thin rectangular plate ofgraphite. Opposite ends of the strip heater are connected in circuit toa source of electrical current in order to achieve controlled heating ofa single wafer with formed SOI structure. The movable upper heatertypically comprises an elongated graphite strip with a squarecross-section of about 1 sq mm in area. The length of the upper heatermore than spans the wafer and is oriented parallel to the reference faceof the wafer spaced about 1 mm above the wafer surface. The ends of theupper heater are connected in an electrical circuit for resistiveheating.

The layers of an encapsulated SOI wafer are diagramed in cross-sectionin FIG. 2. A typical sample consists of a silicon wafer coated with a 1micron thermally grown SiO₂ layer, a 0.5 micron poly-Si layer formed byLPCVD, topped by a 2 micron layer of CVD SiO₂. Prior to the presentprocess development, an additional 30 nm cladding layer Si-rich Si₃ N₄was deposited by RF sputtering or CVD on top of the SiO₂ cap to promotewetting of the molten Si film on SiO₂ during ZMR. The otherwise uselessnitride layer is obviated by the present invention.

The wafer of FIG. 2 is placed cap-side-up on the lower strip heater(FIG. 1). The sample is heated to a base temperature of 1100°-1300° C.,typically in an Argon gas ambient. The upper heater is heated to about2200° C. The strip-like zone beneath the rod is heated to a temperaturejust above the poly-Si melting point, e.g., 1430° C., well below themelting point of SiO₂, thus melting the polysilicon in a band beneaththe solid SiO₂ cap. As the upper heater moves across the face of thewafer, the molten zone is scanned across the sample leaving behind arecrystallized SOI film. In this manner, the polycrystalline siliconlayer is converted to a single crystal layer suitable for semiconductordevices.

The interaction between the surface of the molten silicon and theadjacent SiO₂ surfaces involves a property known as wetting. Water, forexample, beads up on a hydrophobic surface like wax due to poor wetting.The angle formed between the outer skin of a liquid droplet and thesolid surface is called the wetting angle or contact angle. For water,for example, the more hydrophobic the surface, the higher the contactangle. The contact angle of mercury on glass, for example, is so high(greater than 90°) that a convex miniscus is formed at the top of amercury column in a glass tube. For silicon, like other materials, thecontact angle is not solely a function of the molten material but isaffected by the nature of the solid SiO₂ surface as well. Molten siliconon silicon dioxide exhibits a high contact angle, nominally, 87°,characteristic of high beading potential. In contrast, molten silicon onsilicon nitride (Si₃ N₄) exhibits a low contact angle of about 25°. Adescription of the physical chemistry which accounts for this differencein contact angle is beyond the scope of this discussion although itappears that the lower surface energy of the nitride enables the moltensilicon to wet the nitride surface better. That is, silicon beads upless on nitride than on silicon dioxide. Analysis has shown that wettingof molten Si in the SOI structure is best for small contact angles,i.e., much less than 90°. The molten Si is susceptible to beading oragglomeration as the contact angle approaches or exceeds 90°.

During ZMR of encapsulated SOI films, beading up of the molten siliconat the SiO₂ cap interfers with recrystallization and causes stressfractures in the cap itself. Either type of defect is unacceptable inthat it destroys the uniformity of the single crystal silicon.

It is believed that nitrogen atoms in the nitride cladding layer used inthe past diffused through the 2 micron CVD SiO₂ cap to the interfacewith poly-Si. The presence of nitrogen at the interface apparentlypromoted wetting of the molten silicon on the SiO₂ cap by lowering thecontact angle.

As shown in FIG. 3, the present invention represents a better techniquefor introducing an appropriate amount of nitrogen to the poly-Si/CVDSiO₂ cap interface in a uniform, controlled fashion resulting inimproved SOI films after ZMR. The capped SOI structure of FIG. 2 with nonitride cladding is annealed before ZMR at a temperature substantiallybelow the melting point of silicon in an atmosphere rich in reactivenitrogen. A wide range of process parameters are effective, however, a100% NH₃ atmosphere at 1100° appears to work best. At this temperature,the gas decomposes sufficiently at the SiO₂ surface allowing nitrogenatoms to diffuse through the SiO₂ cap. The cap/silicon interface appearsto have an affinity for nitrogen atoms. After the high temperatureanneal, a concentration of nitrogen exists at the interface with aconcomitant improvement in wetting properties. After annealing, thetreated wafer is inserted in the heating apparatus of FIG. 1 for ZMR ofthe silicon. Because of the lowered contact angle at the Si/SiO₂ capboundary, beading or stripping of the molten silicon is suppressed andstress on the cap is thereby sufficiently diminished to leave the capintact. If too much N is present at the Si/SiO₂ cap boundary, althoughwetting is excellent, ZMR results in poor crystal quality of the SOIfilm.

The process is described in more detail in FIGS. 4 and 5. Forming theencapsulated SOI structure begins with preparing a standard 3-inchsilicon wafer typically 500 microns thick. The insulating layer isformed by growing SiO₂ thermally or by CVD on top of the wafer to adepth of 0.5 to 3.0 microns. If desired, before applying the next layer,a seeding pattern can be created as described in U.S. Pat. No.4,371,421. Then, the polysilicon layer is formed via LPCVD on top of theinsulating layer in a thin film from 0.1 to 100 microns (preferably, 0.5micron). Over the poly-Si layer the silicon dioxide cap is formedpreferably by CVD or grown thermally (like the insulating layer) to athickness of from 2.0 to 3.0 microns. The layered wafer then proceeds tothe annealing process as shown in FIG. 5.

Two different pre-ZMR annealing processes are shown in FIG. 5, thepreferred one involving annealing the SOI structure in NH₃ with anintermediate oxidation step. In particular, the better method consistsof exposing the cap side of the SOI structure for:

(1) 1-3 hours in 100% NH₃ ;

(2) 20 minutes in O₂ ; and

(3) 1-3 hours in 100% NH₃ ;

all at 1100° C.

Interruption of the NH₃ anneal with a short oxidation yields SOIstructure with excellent wetting properties. During the initial NH₃exposure, nitrogen is incorporated into the SiO₂ cap, with peak nitrogenaccumulation at both surfaces, that is, the exterior and interiorsurface of the cap. It is believed that accumulation of nitrogen at theexterior gas interface of the cap progressively inhibits further rapidincorporation of nitrogen at the interior poly-Si interface. Toeliminate this surface nitrogen-rich boundary layer (FIG. 6), the sampleis briefly oxidized followed by an additional anneal in NH₃. MultipleNH₃ anneals with intervening oxidation have been found to be moreeffective than a single uninterrupted eight-hour 100% NH₃ anneal asshown in the alternative process of FIG. 5 in promoting wetting of theSOI film.

Alternatively, an NH₃ anneal can be carried out before all of thethickness of the cap is deposited. That is, the cap can be deposited intwo or more steps with intervening anneals.

After deposition of the poly-Si layer and a thinner CVD SiO₂ layer 500 Ato 10,000 A thick, a single anneal in 100% NH₃ or NH₃ in N₂, followed byadditional CVD SiO₂ to a total thickness of 2.0 microns yields sampleswith excellent wetting characteristics during ZMR.

After deposition of the Si layer, we annealed in 4% NH₃ and thendeposited the cap. Although wetting was excellent, crystal quality waspoor presumably because of too much N at the interface. By reducing theamount of N introduced, either by reducing annealing temperatureannealing time or NH₃ partial pressure, the amount of N can be adjustedto achieve good crystal quality as well as wetting. It is believed thatthis anneal introduced N to the native oxide on the polysilicon film.

With even higher annealing temperatures (1100°-1400° C.) it may bepossible to introduce sufficient nitrogen into the two micron SiO₂ capwithout the intermediate oxidation step. It has been found, however,that a high temperature anneal of the SOI structure in a relativelyunreactive gas N₂, does not produce samples which wet well during ZMR.It is believed that other nitrogen containing compounds, possiblyalkylamines, which decompose at the SiO₂ surface at elevatedtemperatures may also be effective in introducing sufficient nitrogeninto the SiO₂ capping layer.

Auger spectroscopy of good samples annealed according to the inventionindicate that far less than a full monolayer of nitrogen is present atthe interface between the SiO₂ cap and the poly-Si film. The sensitivityof the Auger spectroscopy instrument used was one-half monolayer at theSi/capping SiO₂ interface. The instrument gave no reading for a nitrogenlayer thus indicating that less than one-half monolayer of nitrogenatoms was present at the interface.

EXAMPLE I

An encapsulated SOI was formed having a one-half micron polysiliconlayer topped with a 2.0 micron SiO₂ cap. Prior to ZMR the sample wasannealed for one hour in 100% NH₃, oxidized in O₂ for twenty minutes andannealed for another hour in 100% NH₃ ambient all at 1100° C. The capwas observed to be intact after ZMR and the recrystallized silicon filmwas observed to have good crystal quality on gross inspection.

EXAMPLE II

In this experiment, all parameters were the same as Example I exceptthat the annealing time in NH₃ is extended to three hours both beforeand after the intervening oxidation step. After ZMR, the sample wasinspected and the cap found to be intact. Marginally better crystalquality than that in Example I was observed.

EXAMPLE III

Five samples were prepared in accordance with FIG. 2 and subjected topure NH₃ anneals for one, two, three, four and eight hours,respectively, without the intermediate oxidation step. The results weremoderately successful, however, not qualitatively as good as in ExampleI or II. In particular, there was a slight tendency of beading of thesilicon film during ZMR.

EXAMPLE IV

To test the partial cap anneal technique of FIG. 7, samples with thefollowing initial cap thicknesses were prepared, annealed and finishedprior to ZMR in accordance with the following table:

    ______________________________________                                        Initial Cap Thickness                                                                       Anneal Time                                                                              Final Cap Thickness                                  (Micron)      (Hours)    (Micron)                                             ______________________________________                                        0.2           4          2.0                                                  0.2           8          2.0                                                  0.5           4          1.5                                                  0.5           8          1.5                                                  1.0           4          2.0                                                  1.0           8          2.0                                                  ______________________________________                                    

Identical sample pairs were annealed for four and eight hoursrespectively. The oxidation step was not used. Following ZMR, eachsample was inspected and found to have a good cap and good crystalquality.

EXAMPLE V

A sample wafer was prepared in accordance with FIG. 2 except that thecap thickness was reduced to 500 Angstroms. The thinly capped SOI wassubjected to a 4% NH₃ atmosphere for thirty minutes at 1100°. Theremainder of the thickness of the SiO₂ cap was deposited to a fullthickness of 2.0 microns before undergoing ZMR. Excellent results wereobtained.

EXAMPLE VI

A sample was prepared in accordance with FIG. 2, except that beforedepositing the SiO₂ capping layer, the poly-Si layer was exposed to a 4%NH₃ anneal at 1100° C. The sample had excellent wetting characteristicesbut much nitrogen was incorporated into the silicon layer too, resultingin poor crystal quality upon ZMR.

EXAMPLE VII

A sample prepared in accordance with FIG. 2 was subjected to a hightemperature anneal in a nitrogen gas (N₂) with no improvement in thewetting characteristics during ZMR. The resulting beading degraded thecrystal quality and overstressed the cap. It was concluded that N₂ didnot decompose at 1100° C. sufficiently to allow nitrogen atoms todiffuse to the interface. It was concluded that a gas is required whichsufficiently decomposes well below the semiconductor melting point torelease the reactive element, here N atoms.

The advantages of the foregoing annealing processes are important interms of future commercial exploitation of SOI technology. The reactivenitrogen annealing process has relatively noncritical process parametersand can be performed as a batch process permitting a large throughput atlow cost producing a much more uniform distribution of nitrogen than theexisting technique of sputtered or CVD silicon nitride cladding withbetter properties and reproducibility.

The foregoing description of specific process parameters and materialsis intended to be illustrative rather than restrictive. Many variations,additions, omissions or rearrangements with respect to the specificprocesses described herein are, of course, possible without departingfrom the spirit and principle of the invention. For example, whileammonia is preferred, other reactive nitrogen bearing gases may be used.While the foregoing examples were carried out at atmospheric pressure,different pressures will also work. In addition, while nitrogen appearsto be beneficial with silicon, other elements which have a similareffect on wetting characteristics may be applied via the same process.Moreover, while silicon is by far the most important application knownat present, other semiconductor material such as germanium and galiumarsenide can be treated in a similar manner.

The temperature and duration of the anneal can be varied depending onthe permeability (density) and thickness of the capping layer. Themaximum temperature of 1250° C. attainable by conventional furnacesshould be more than adequate.

The intermediate oxidation step can be employed more than once and canbe used in combination with the multistage cap formation system of FIG.7. The process described herein, of course, is not restricted to anyparticular type of ZMR apparatus; other conventional means exist forgenerating a travelling molten zone besides those described and shown inFIG. 1 in this application. In any case, the scope of the invention isdefined not by the specific processes disclosed herein but by theappended claims and equivalents thereto.

What is claimed is:
 1. A method of forming an encapsulated insulatedsemiconductor film structure, comprisingforming a first layer ofinsulating material on a substrate, forming a second layer of amorphousor polycrystalline silicon, forming a third layer of silicon dioxide toform a silicon dioxide capped silicon on insulator structure, providingan atmosphere consisting essentially of inerts and a noninert gas,stable at ambient temperature, which is a source of a reactive materialwhose presence promotes wetting of molten silicon on silicon dioxide,said noninert gas decomposing below the melting point of silicon torelease said reactive material, said reactive material being reactivenitrogen, annealing said structure in said atmosphere at a temperaturebelow the melting point of silicon but high enough to decompose said gasso as to release said reactive material for a sufficient length of timeto diffuse quantities of said reactive material through the third layerto the interface with the second layer in an amount sufficient to avoidagglomeration of the resulting semiconductor film, and subjecting theannealed structure resulting from the preceding steps to zone meltingrecrystallization.
 2. A method of forming an encapsulated insulatedsemiconductor film structure, comprisingforming a first layer ofinsulating material on a substrate, forming a second layer of amorphousor polycrystalline silicon, forming a third layer of silicon dioxide toform a silicon dioxide capped silicon on insulator structure, providingan atmosphere consisting essentially of inerts and a noninert gas,stable at ambient temperature, which is a source of a reactive materialwhose presence promotes wetting of molten silicon on silicon dioxide,said noninert gas decomposing below the melting point of silicon torelease said reactive material, said noninert gas being selected fromthe group consisting of ammonia and alkyl amines, annealing saidstructure in said atmosphere at a temperature below the melting point ofsilicon but high enough to decompose said gas so as to release saidreactive material for a sufficient length of time to diffuse quantitiesof said reactive material through the third layer to the interface withthe second layer in an amount sufficient to avoid agglomeration of theresulting semiconductor film, and subjecting the annealed structureresulting from the preceding steps to zone melting recrystallization. 3.A method of forming an encapsulated insulated semiconductor filmstructure, comprisingforming a first layer of insulating material on asubstrate, forming a second layer of amorphous or polycrystallinesilicon, forming a third layer of silicon dioxide to form a silicondioxide capped silicon on insulator structure, providing an atmosphereconsisting essentially of inerts and a noninert gas, stable at ambienttemperature, which is a source of a reactive material whose presencepromotes wetting of molten silicon on silicon dioxide, said noninert gasdecomposing below the melting point of silicon to release said reactivematerial, said atmosphere containing NH₃, annealing said structure insaid atmosphere at a temperature below the melting point of silicon buthigh enough to decompose said gas so as to release said reactivematerial for a sufficient length of time to diffuse quantities of saidreactive material through the third layer to the interface with thesecond layer in an amount sufficient to avoid agglomeration of theresulting semiconductor film, and subjecting the annealed structureresulting from the preceding steps to zone melting recrystallization. 4.A method of forming an encapsulated insulated semiconductor filmstructure, comprisingforming a first layer of insulating material on asubstrate, forming a second layer of amorphous or polycrystallinesilicon, forming a third layer of silicon dioxide to form a silicondioxide capped silicon on insulator structure, providing an atmosphereconsisting essentially of inerts and a noninert gas, stable at ambienttemperature, which is a source of a reactive material whose presencepromotes wetting of molten silicon on silicon dioxide, said noinert gasdecomposing below the melting point of silicon to release said reactivematerial, said reactive material being reactive nitrogen, annealing saidstructure in said atmosphere at a temperature below the melting point ofsilicon but high enough to decompose said gas so as to release saidreactive material for a sufficient length of time to diffuse quantitiesof said reactive material through the third layer to the interface withthe second layer in an amount sufficient to avoid agglomeration of theresulting semiconductor film, said annealing step being performed in twostages with an intervening oxidation step, and subjecting the annealedstructure resulting from the preceding steps to zone meltingrecrystallization.
 5. A method of forming an encapsulated insulatedsemiconductor film structure, comprisingforming a first layer ofinsulating material on a substrate, forming a second layer of amorphousor polycrystalline silicon, forming a third layer of silicon dioxide toform a silicon dioxide capped silicon on insulator structure, providingan atmosphere consisting essentially of inerts and a noninert gas,stable at ambient temperature, which is a source of a reactive materialwhose presence promotes wetting of molten silicon on silicon dioxide,said noninert gas decomposing below the melting point of silicon torelease said reactive material, said noninert gas being selected fromthe group consisting of ammonia and alkyl amines, annealing saidstructure in said atmosphere at a temperature below the melting point ofsilicon but high enough to decompose said gas so as to release saidreactive material for a sufficient length of time to diffuse quantitiesof said reactive material through the third layer to the interface withthe second layer in an amount sufficient to avoid agglomeration of theresulting semiconductor film, said annealing step being performed in twostages with an intervening oxidation step, and subjecting the annealedstructure resulting from the preceding steps to zone meltingrecrystallization.
 6. A method of forming an encapsulated insulatedsemiconductor film structure, comprisingforming a first layer ofinsulating material on a substrate, forming a second layer of amorphousor polycrystalline silicon, forming a third layer of silicon dioxide toform a silicon dioxide capped silicon on insulator structure, providingan atmosphere consisting essentially of inerts and a noninert gas,stable at ambient temperature, which is a source of a reactive materialwhose presence promotes wetting of molten silicon on silicon dioxide,said noninert gas decomposing below the melting point of silicon torelease said reactive material, said atmosphere containing NH₃,annealing said structure in said atmosphere at a temperature below themelting point of silicon but high enough to decompose said gas so as torelease said reactive material for a sufficient length of time todiffuse quantities of said reactive material through the third layer tothe interface with the second layer in an amount sufficient to avoidagglomeration of the resulting semiconductor film, said annealing stepbeing performed in two stages with an intervening oxidation step, andsubjecting the annealed structure resulting from the preceding steps tozone melting recrystallization.
 7. The method of claim 6, wherein saidatmosphere is 100% NH₃.
 8. The method of claim 7, wherein the annealingsteps both before and after heating in oxygen are carried out atapproximately 1100° C. for one to three hours, respectively.
 9. A methodof forming an encapsulated insulated semiconductor film body,comprisingforming an insulating layer on a substrate, forming asemiconductor layer of amorphous or polycrystalline silicon on top ofthe insulating layer, forming a capping layer of silicon dioxide on topof the semiconductor layer to a partial thickness to form a silicondioxide capped silicon on insulator structure, providing an atmosphereconsisting essentially of inerts and a noninert gas, stable at ambienttemperature, which is a source of a reactive material whose presencepromotes wetting of molten silicon on silicon dioxide, said noninert gasdecomposing below the melting point of silicon to release said reactivematerial, said reactive material being reactive nitrogen, annealing saidstructure in said atmosphere at a temperature below the melting point ofsilicon but high enough to decompose said gas so as to release saidreactive material for a length of time sufficient for the reactivematerial to diffuse through the partial thickness of the capping layerto the interface with the semiconductor layer to avoid agglomeration ofthe resulting semiconductor film, increasing the thickness of thecapping layer by forming an additional integral layer of the samematerial, and subjecting the structure formed by the preceding steps tozone-melting recrystallization.
 10. A method of forming an encapsulatedinsulated semiconductor film body, comprisingforming an insulating layeron a substrate, forming a semiconductor layer of amorphous orpolycrystalline silicon on top of the insulating layer, forming acapping layer of silicon dioxide on top of the semiconductor layer to apartial thickness to form a silicon dioxide capped silicon on insulatorstructure, providing an atmosphere consisting essentially of inerts anda noninert gas, stable at ambient temperature, which is a source of areactive material whose presence promotes wetting of molten silicon onsilicon dioxide, said noninert gas decomposing below the melting pointof silicon to release said reactive material, said noninert gas beingselected from the group consisting of ammonia and alkyl amines,annealing said structure in said atmosphere at a temperature below themelting point of silicon but high enough to decompose said gas so as torelease said reactive material for a length of time sufficient for thereactive material to diffuse through the partial thickness of thecapping layer to the interface with the semiconductor layer to avoidagglomeration of the resulting semiconductor film, increasing thethickness of the capping layer by forming an additional integral layerof the same material, and subjecting the structure formed by thepreceding steps to zone-melting recrystallization.
 11. A method offorming an encapsulated insulated semiconductor film body,comprisingforming an insulating layer on a substrate, forming asemiconductor layer of amorphous or polycrystalline silicon on top ofthe insulating layer, forming a capping layer of silicon dioxide on topof the semiconductor layer to a partial thickness to form a silicondioxide capped silicon on insulator structure, providing an atmosphereconsisting essentially of inerts and a noninert gas, stable at ambienttemperature, which is a source of a reactive material whose presencepromotes wetting of molten silicon on silicon dioxide, said noninert gasdecomposing below the melting point of silicon to release said reactivematerial, said atmosphere containing NH₃, annealing said structure insaid atmosphere at a temperature below the melting point of silicon buthigh enough to decompose said gas so as to release said reactivematerial for a length of time sufficient for the reactive material todiffuse through the partial thickness of the capping layer to theinterface with the semiconductor layer to avoid agglomeration of theresulting semiconductor film, increasing the thickness of the cappinglayer by forming an additional integral layer of the same material, andsubjecting the structure formed by the preceding steps to zone-meltingrecrystallization.
 12. A method of forming an encapsulated insulatedsemiconductor film body, comprisingforming an insulating layer on asubstrate, forming a semiconductor layer of amorphous or polycrystallinesilicon on top of the insulating layer, forming a capping layer ofsilicon dioxide on top of the semiconductor layer to a partial thicknessto form a silicon dioxide capped silicon on insulator structure,providing an atmosphere consisting essentially of inerts and a noninertgas, stable at ambient temperature, which is a source of a reactivematerial whose presence promotes wetting of molten silicon on silicondioxide, said noninert gas decomposing below the melting point ofsilicon to release said reactive material, said atmosphere containingNH₃ and N₂, annealing said structure in said atmosphere at a temperaturebelow the melting point of silicon but high enough to decompose said gasso as to release said reactive material for a length of time sufficientfor the reactive material to diffuse through the partial thickness ofthe capping layer to the interface with the semiconductor layer to avoidagglomeration of the resulting semiconductor film, increasing thethickness of the capping layer by forming an additional integral layerof the same material, and subjecting the structure formed by thepreceding steps to zone-melting recrystallization.
 13. The method ofclaim 11, wherein said atmosphere contains less than 10% NH₃.
 14. Amethod of making an encapsulated silicon on insulator structure,comprisingforming an encapsulated silicon on insulator structure havinga silicon dioxide cap over an amorphous or polycrystalline silicon film,with a quantity of a reactive material whose presence promotes wettingof molten silicon on silicon dioxide at the interface of the cap andfilm to avoid agglomeration of the film due to zone-meltingrecrystallization, by subjecting said structure, during formation beforezone-melting recrystallization, to an annealing atmosphere consistingessentially of inerts and a noninert gas, stable at ambient temperature,which is a source of said reactive material, said atmosphere beingheated to a temperature below the melting point of silicon butsufficiently high to cause the noninert gas to decompose and releasesaid reactive material in nascent, unbound form, said noninert gas beingselected from the group consisting of ammonia and alkyl amines, andsubjecting the resulting structure to zone-melting recrystallization.